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| BAS19, BAS20, BAS21 Small Signal Diodes SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES Silicon Planar Epitaxial High-Speed Diodes Top View .056 (1.43) .052 (1.33) For switching and general purpose applications. These diodes are also available in other case styles including: the SOD-123 case with the type designation BAV19W BAV21W, the MiniMELF case with the type designation BAV101 - BAV103, and the DO-35 case with the type designation BAV19 - BAV21. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Dimensions in inches and (millimeters) 3 Top View 1 2 Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Continuous Reverse Voltage BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage BAS19 BAS20 BAS21 Non-Repetitive Peak Forward Current at t = 1 s at t = 1 s Average Rectified Forward Current (averaged over any 20 ms period) Forward DC Current at Tamb = 25 C Repetitive Peak Forward Current Power Dissipation up to Tamb = 25 C Junction Temperature Storage Temperature Range 1) 2) Value 100 150 200 120 200 250 2.5 0.5 2001) 2002) 625 2002) 150 - 65 to +150 Unit V V V V V V A A mA mA mA mW C C VR VR VR VRRM VRRM VRRM IFSM IFSM IF(AV) IF IFRM Ptot Tj TS Measured under pulse conditions; Pulse time = tp 0.3 ms. Device on fiberglass substrate, see layout. 4/98 BAS19, BAS20, BAS21 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 100 mA at IF = 200 mA Leakage Current at VR = VRmax at VR = VRmax; Tj = 150 C Dynamic Forward Resistance at IF = 10 mA Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time (see figures) from IF = 30 mA through IR = 30 mA to IR = 3 mA, RL = 100 Thermal Resistance Junction to Ambient Air 2) Min. - - - - - - - Typ. - - - - 5 - - Max. 1.0 1.25 100 100 - 5 50 Unit V V nA A pF ns VF VF IR IR rf Ctot trr RthJA - - 4302) K/W Device on fiberglass substrate, see layout. .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) Test Circuit and Waveforms BAS19, BAS20, BAS21 Test circuit Waveforms; IR = 3 mA Input Signal - total pulse duration - duty factor - rise time of reverse pulse - reverse pulse duration Oscilloscope - rise time - circuit capacitance* tp(tot) = 2 s = 0.0025 tr = 0.6 ns tp = 100 ns tr = 0.35 ns C < 1 pF *C = oscilloscope input capacitance + parasitic capacitance |
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